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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3111 2SK3111-S 2SK3111-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
* Gate voltage rating 30 V * Low on-state resistance RDS(on) = 180 m MAX. (VGS = 10 V, ID = 10 A) * Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) * Avalanche capability rated * Built-in gate protection diode * Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25 C) Drain current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 30 20 60 1.5 65 150 -55 to +150 20 100
V V A A W W C C A mJ
Total power dissipation (TA = 25 C) Total power dissipation (TC = 25 C) Channel temperature Storage temperature Single avalanche current Single avalanche energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 100 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13334EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 2000
2SK3111
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Characteristics Drain Leakage Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Test Conditions VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V ID = 10 A VGS(on) = 10 V RG = 10 VDD = 160 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 50 A/s 2.5 3.0 120 1000 300 150 25 90 80 40 40 7 25 1.0 300 1.7 180 MIN. TYP. MAX. 100 10 4.5 Unit
A A
V S m pF pF pF ns ns ns ns nC nC nC V ns
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D13334EJ1V0DS00
2SK3111
5 TYPICAL CHARACTERISTICS (TA = 25 C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 70 60
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed
Pulsed VGS = 30 V
10
ID - Drain Current - A
30
50 40 VGS = 10 V 30 20 10 0 0 10 20 VDS - Drain to Source Voltage - V
1 0.1 Tch = 125 C 75 C 25 C -25 C 0.01
0.001 0 5 10 VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
|yfs| - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
5.0 4.5 4.0 3.5 3.0 2.5 2.0 -50 VDS = 10 V ID = 1 mA
100 Tch = -25 C 25 C 75 C 125 C
VDS = 10 V Pulsed
10
1
0.1
0
50
100
150
0.01 0.01
0.1
1 ID- Drain Current - A
10
100
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 500 Pulsed 400 ID = 20 A 10 A 4A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 600 500 400 300 200 VGS = 10 V 100 0 0.1 VGS = 30 V Pulsed 1 10 100
300
200
100
0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D13334EJ1V0DS00
3
2SK3111
RDS (on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 350 300 ID = 20 A 250 200 ID = 10 A 150 100 50 0 -50 0 50 VGS = 10 V Pulsed 100 150 Tch - Channel Temperature - C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
Pulsed
10 VGS = 10 V 0V 1
0.1 0.0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
1000
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
tr td(off) tf td(on) 10
1000
Ciss
100
100 Coss VGS = 0 V f = 1 MHz 1 10 100 Crss
10 0.1
1000
1 0.1
1
VDD = 100 V VGS = 10 V RG = 10 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE CURRENT 1000 di/dt = 50 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 200 16
VDS - Drain to Source Voltage - V
14 150 VDD = 160 V 100 V 40 V VGS 12 10 8 6 50 4 VDS 2 ID = 20 A 0 0 10 20 30 40 50 QG - Gate Charge - nC 0 60
100
100
10
1 0.1
1
10
100
IF - Diode Current - A
4
Data Sheet D13334EJ1V0DS00
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
2SK3111
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ted imi )L (on S RD
ID(pulse) P W
10 0 s
=1 0 s
ID - Drain Current - A
10
ID(DC)
Po we r
1
1m 3m s Di 10 m s ss ipa s tio n Lim ite d
0.1
TC = 25 C Single Pulse 1 10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3 C/W 10
1
Rth(ch-C) = 1.92 C/W
0.1
0.01 10 100 1m 10m 100m 1 10
Single Pulse 100 1000
PW - Pulse Width - s
Data Sheet D13334EJ1V0DS00
5
2SK3111
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 100 V RG = 25 VGS = 20 V 0 V IAS 20 A
IAS - Single Avalanche Energy - A
IAS = 20 A
Energy Derating Factor - %
VDD = 100 V VGS = 20 V 0 V RG = 25 Starting Tch = 25 C
100 80 60 40 20 0
EA
10
S=
10
0m
J
1 0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13334EJ1V0DS00
2SK3111
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX.
2)TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
(10) 4
1
2
3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
(10) 4 1.00.5 8.50.2 4.8 MAX. 1.30.2
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(
R 0.5
)
3 2.54 TYP.
(0
.8R
)
0.50.2
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D13334EJ1V0DS00
7
2SK3111
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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